these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) ( ? )i d (a) 0.058 @ v gs = 10 v 2.0 0.082 @ v gs = 4.5v 1.7 product summary 30 ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds 30 v gs 20 t a =25 o c2.0 t a =70 o c1.7 i dm 20 i s 1.6 a t a =25 o c0.34 t a =70 o c0.22 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherw ise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 5 sec 100 steady-state 166 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja d s g 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM1330N product specification
AM1330N notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 10 a v gs = 10 v, i d = 2.0 a 58 v gs = 4.5 v, i d = 1.7 a 82 forward tranconductance a g fs v ds = 10 v, i d = 2.0 a 11.3 s diode forward voltage v sd i s = 1.6 a, v gs = 0 v 0.75 v total gate charge q g 7.5 gate-source charge q g s 0.6 gate-drain charge q g d 1.0 turn-on delay time t d ( on ) 8 rise time t r 24 turn-off delay time t d ( off ) 35 fall-time t f 10 specifications (t a = 25 o c unless otherwise noted) parameter symbol test conditions limits unit static zero gate voltage drain current i dss ua drain-source on-resistance a r ds(on) m ? dynamic b v dd = 10 v, r l = 15 ? , i d = 1 a, v gen = 4.5 v ns v ds = 10 v, v gs = 5 v, i d = 2.0 a nc 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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